| 摘要 |
<p>A semiconductor laser includes a current blocking layer (2) formed on a substrate (1), a first cladding layer (5) formed on the current blocking layer (2), an active layer (6) formed on the first cladding layer (5), and a second cladding layer (7) formed on the active layer (6). An indent (4) is formed in the current blocking layer near the center of the laser element, and a V-shaped groove (3) is formed in the current blocking layer (2) across the indent. A gain guide structure is formed where the indent is formed, and an index guide structure is formed near the cleaved facet. A stable transverse mode laser emission is ensured minimising the influence of the return beam reflected from the disc surface, and the mode competition noise.</p> |
