| 摘要 |
PURPOSE:To achieve the reduction of the area of an IC pellet by forming the width of contact windows of a resistor with a conductive wiring to be equal to or larger than that of the resistor. CONSTITUTION:Contact windows 2 of a resistor 1 with a conductor have the same width to reduce a formation area of the resistor. Even an Al wiring 8 contacts with an N-epitaxial layer 6, no ohmic contact is made when the density of the N-layer 6 is within the range of 1X10<14>-1X10<17>/cm<3>. This is because a Schottky barrier junction is formed between the resistor 1 and the N-layer 6. This resistor can be used without any problem in the case where it is used under a power supply voltage equal to or less than the withstand voltage of several tens of the Schottky junction. |
