| 摘要 |
PURPOSE:To improve crystallinity of a liquid phase epitaxial growth layer formed on the crystal of a GaAs substrate by washing with hydrochloric acid before pre-treatment etching for cleaning the surface of the substrate in manufacturing a semiconductor device such as GaAlAs-GaAs semiconductor laser. CONSTITUTION:In the liquid phase epitaxial growth of a multilayer semicondoctor wherein a GaAs layer is formed on a GaAs substrate by liquid phase epitaxial growth, a groove penetrating from the surface of the GaAs layer to the GaAs substrate is formed by etching, the surface of the GaAs layer including the surface of the groove is etched lightly with the mixture of sulfuric acid and hydrogen peroxide solution and a GaAlAs layer is formed on the etched surface of the GaAs layer by liquid phase epitaxial growth, a semiconductor layer wherein the crystallinity is better with greatly less pin-holes than hitherto can be formed by dipping the GaAs layer in hydrochloric acid before etching to form the groove and washing with water. In a semiconductor laser, etc., the characteristics and the reliability are improved by reduction of reactive current flowing in a pin-hole, etc. |
