| 摘要 |
PURPOSE:To improve a temperature characteristic by a difference of a coefficient of thermal expansion, and also to prevent the breakdown of an electrode part at the time of forming a cavity by forming the electrode part for forming a capacitance together with a diaphragm part, by a P<+> low resistance Si layer. CONSTITUTION:A P<+> layer 7 is formed to a thickness of a diaphragm on an Si single crystal substrate 8, and thereafter, an epitaxial layer 5 is grown to a thickness corresponding to an air-gap of a capacitance. Subsequently, a low resistance buried layer 6 is formed, and insulating layers 2, 9 are formed. Also, an opening is formed in the insulating layer 2 in order to make an Si electrode lead 15, and thereafter, a P<+> low resistance Si layer 13 is formed, and an opening 3 is made so as to pass through this layer 13 and the insulating layer 2. Thereafter, metallic layers 1, 14 are formed, and a surface stabilizing layer 10 is formed on a diaphragm part 11.
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