| 摘要 |
PURPOSE:To perform the necessary heat treatment on a semiconductor substrate swiftly and surely, and furthermore, without making the characteristics thereof deteriorate while strain due to a contact of the semiconductor substrate and the supporting stand is prevented from generating in the substrate by a method wherein the semiconductor substrate is carried to the heating parts by airflow conveyance and is immediately heated. CONSTITUTION:The necessary gas is flowed in a furnace core tube 1a and heating parts 1 and 2 are held at the prescribed temperature by a heating means 5 in an atmosphere of the gas. A quartz gas jetting stand 7, which is extendedly provided to the heating part 2 from one end of the furnace core tube 1a and has its built-inflat space, is provided, groups of numerous nozzles 8 are properly arrayed on the jetting stand 7 and the gas is made to jet in the prescribed direction from the nozzles 8. A semiconductor substrate 3 is made to float by nozzles 8a, is airflow-conveyed to the heating parts by nozzles 8b, is controlled by nozzles 8c and is reversely conveyed by means of an airflow through the nozzles 8d. The gas for a conveying means 4 is preheated by a preheating means 6, and moreover, the space in the jetting stand 7 is divided by partition walls 9. By the partition walls 9, the feeding of gas to each part is changed-over, the generation of airflow is partially performed, the amount of the conveying gas is lessened and the temperature of the heating part 2 is prevented from being subjected to the effect due to the airflow. By this constitution, a highly reliable heat treatment can be performed on the semiconductor substrate 3 swiftly. |
