| 摘要 |
PURPOSE:To obtain a thin film forming device which eliminates the need for a heating mechanism required for gasifying a material to be deposited by evaporation by ejecting a compd. of an ordinary-temp. gas having the material to be deposited by evaporation into a vacuum chamber, exciting and ionizing the compd. and accelerating the same so as to collide against a substrate to be formed thereon with a thin film. CONSTITUTION:A compd. of an ordinary-temp. gas having a material to be deposited by evaporation (e.g.; SiH4) is introduced 13 into a thin film forming chamber 1 and is ejected from a nozzle 6. A filament 8 for ionizing electron is then heated and a potential difference is given between the filament 8 and an electron lead-out electrode 9 by which the electron is led out. The electron is ejected from a nozzle 6 so as to collide against the clustered compd. The material to be deposited by evaporation is decomposed from said compd. and at the same time said material is excited and ionized. A potential difference is applied between the electrodes 9 and 10 to accelerate the ionized material to be deposited by evaporation thus depositing the thin film of, for example, Si on a substrate 11 for forming a thin film. As a result, the thin film of the material which evaporates only at a high temp. or the material having high reactivity is easily formed. |
