| 摘要 |
PURPOSE:To stabilize the condition of the growth of single crystal in the production of a semiconductor single crystal by zone-melting in a sealed quartz ampule, by selecting the thermal expansion coefficient of the heat-dissipation material close to that of quartz. CONSTITUTION:For example, in the production of an HgCdTe single crystal ingot, Hg, Cd and Te are melted in a sealed quartz ampule 1 at specific ratios, and the solution is cooled and solidified to obtain a polycrystaline HgCdTe ingot. The ampule 1 is opened, a heat-dissipation material 3 having convex face and Te powder 4 used as solvent are put into the ampule, and the ampule 1 is sealed again. The powder 4 is melted by heating the ampule in a vertical furnace under a temperature profile wherein the highest temperature zone at the initiation of the growth of single crystal is at the position of the powder 4. The heat-dissipation material 3 is made of a material having a thermal expansion coefficient of close to that of quartz. The gap between the ampule 1 and the heat-dissipation material 3B can be narrowed by this process, and accordingly, the intrusion of the solvent Te 5 in the gap is prevented, and the amount of the liquid 5 can be maintained at a definite level. |
