| 摘要 |
PURPOSE:To obtain the Schottky barrier diode having preferably reverse direction voltage/current characteristics by connecting the Schottky barrier diode element and a PNPN thyristor element equivalently in the same polarity one another as a composite diode configuration. CONSTITUTION:An N<-> type layer 42 is epitaxially grown on an N<+> type semiconductor substrate 41, and a ring-shaped laminated region 45 is diffused in the layer 42. That is, P type region L1 is first provided, an N type region L2 is then diffused therein, and P<+> type region L3 is further formed therein. Subsequently, an insulating layer 55 is covered on the entire surface, the inside of the ring-shaped region 45 and the region L3 are removed, a metallic layer 49 is covered on the entire surface while contacting with the exposed layer 42 and the region L3, and a conductive layer 53 is covered also on the back surface of the substrate 41. Thus, a Schottky junction is formed with the semiconductor layer and the layers on both the front and the back surfaces, the PNPN thyristor is formed with the region 45, and a current flowing from the layer 53 to the layer 49 side can be reduced as the reverse voltage is increased. |
