| 摘要 |
PURPOSE:To form various types of elements on the same substrate with less steps by forming an off-set region of a MOSFET and a base region of a bipolar transistor to become the same depth in the same step. CONSTITUTION:After N type well regions 3, 3' are formed in a P type substrate, an element separating selective oxide film 2, a gate 4 and a collector 8 are formed, and then low density off-set regions 10, 10' of source, drain of P-channel MOSFET, and a base region 10'' of a bipolar transistor are formed. After an SiO2 film 14 is then formed on the side of a gate 4, high density regions 5, 5' of source, drain of MOSFET are ion implanted to form an emitter 9 of the bipolar transistor. |
