| 摘要 |
PURPOSE:To obtain stable electrical, optical, and photoconductive characteristics, all-environmental type resistance, high sensitivity characteristics especially in the long wavelength region, and superior durability, and freedom from residual potential by forming a photoreceptor layer having a specified structure made of a-Si (H, X) on a substrate. CONSTITUTION:The photoconductive member 100 consists of a substrate 101 and a photoreceptor 102 formed on it, and the photoreceptor layer 102 consists of the first layer 103 comprising the first layer region G made of amorphous Ge (a-Ge), and the second photoconductive layer region S made of a-Si, and the second layer 104 made of a-SiC formed in this order from the substrate 101. The layer 103 contains N, and a conductivity governor kappa in a concn. distribution in the layer thickness direction having the max. value in the region S and in this region S, the distribution increases toward the side of the substrate 101. The photoconductive member of such a structure is improved in elctrical, optical photoconductive, voltage withstanding, and evey environment withstanding characteristics, high in sensitivity and S/N ratio, good in matching with a semiconductor laser, and high in light responsivity, and it can stably form a high-quality image. |
