| 摘要 |
PURPOSE:To effectively perform a current block by forming grooves at both sides of a mesa, and forming thickly current block layers only at both sides of the mesa. CONSTITUTION:A mask 32 is formed on an n type InP substrate 31, and grooves 33a, 33b are formed in a direction of a resonator. Then, the first clad layer 35 made of n type InP, an active layer 36 made of InGaAsP, the second clad layer made of p type InP, a current blocking layer 38 made of n type Inp, a p type InP layer 39, and an ohmic contact layer 40 are grown on an n type InP substrate 31. In this case, the layer 38 is not formed on the layer 36 of the mesa 34 in the structure. Then electrodes 41, 42 are formed. |
