发明名称 SEMICONDUCTOR LASER DEVICE
摘要 PURPOSE:To prevent the loss due to exuding of light by forming a buried layer in a striped groove of high and low refractive index layers. CONSTITUTION:A clad layer 22, an active layer 23, a clad layer 24, and a current blocking layer 25 are sequentially grown on an n type GaAs substrate 21. Then, a resist 31 is coated on the layer 25, a striped window is formed on the resist 31, and with the resist 31 as a mask the layers 25, 24 are etched to form a striped groove 32. Then, the first coating layer 26 having a large refractive index, the second coating layer 27 having a small refractive index and a p type GaAs coating layer 28 are formed.
申请公布号 JPS60137085(A) 申请公布日期 1985.07.20
申请号 JP19830246148 申请日期 1983.12.26
申请人 TOSHIBA KK 发明人 MOGI NAOTO;WATANABE YUKIO;SHIMADA NAOHIRO;OKAJIMA MASASUE
分类号 H01S5/00;H01S5/22;H01S5/223;H01S5/323 主分类号 H01S5/00
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