| 摘要 |
PURPOSE:To stabilize electrical, optical, and photoconductive characteristics by forming a photoreceptor composed of the first layer made of a-Si, the second layer made of a-SiGe, and at least one of said both layers contg. O, and the third layer made of a-SiN on a substrate in this order from it. CONSTITUTION:The photoconductive member 100 consists of a substrate 101 and a photoreceptor 102 formed on it, and the photoreceptor 102 consists of the first layer 103 made of amorphous silicon (a-Si), the second layer 104 made of a-SiGe, and the third layer 105 made of SiN in this order from the substrate 101. At least one of the layers 103, 104 contains O, and the layer 104 contains Ge in a uniform concn. distribution both in the layer thickness direction and in every plane parallel to the plane of the substrate 101, and one of the layers 103, 104, preferably, contains a conductivity governor. The photoconductive member of such a structure is improved in electrical, optical, photoconductive, voltage withstanding, and every environment withstanding characteristics, high in sensitivity and S/N ratio, good in matching with a semiconductor laser, and rapid in light responsivity, and it can stably form a high-quality image. |
