NON-LINEAR LOAD ELEMENT FOR MEMORY CELL

摘要

A bistable circuit element for integration into a static memory cell constructed of two transistors with cross-coupled base and collector regions and having a nonlinear load element (111) wherein the load element is a nonlinear surface load device. In particular, the nonlinear surface load device is a structure comprising a metallized contact segment (124) in semiconductor junction contact with a lightly doped monocrystalline silicon implant (119). The manufacturing technique approximates that of a Schottky diode with implant doping modified to increase the non-ideality factor m relative to the ideal of m = 1. The non-ideality factor m is limited so that the nonlinear surface load device does not degenerate into a linear ohmic.