SEMICONDUCTOR LASER DEVICE

摘要

A semiconductor laser device has at least a semiconductor active layer (12), two semiconductor clad layers (11) which sandwich the active layer and have a wider band gap and a lower refractive index than the active layer (12), an optical resonator, and carrier injection means. At least the active layer (12) has an angle of inclination ( theta ) relative to an axis which is perpendicular to optically flat faces (13) constituting said optical resonator. The inclination angle theta (rad) should most preferably lie in a range of:

where theta z denotes the reflection angle, theta c the critical angle, W one-half of the waveguide thickness, and l the cavity length. The laser device is effective for preventing the laser facets from breaking down, and can produce high power.