| 摘要 |
<p>A semiconductor device, especially a gate turn-off thyristor, has interdigitated electrodes (106, 107), e.g. of Al, provided with with contact strips (106a, 107a) of a solderable material, to which a lead (400) may be soldered. The solderable strips may comprise multilayer structures of Al-Mo-Ni-Au or Al-Zn-Ni-Au. <IMAGE></p> |
