发明名称 PLANAR MAGNETRON SPUTTERING METHOD
摘要 PURPOSE:To reduce the number of foreign matter sticking on a substrate by making the direction of an electric field and that of a magnetic field parallel to each other on the boundary between plural target members to inhibit abnormal electric discharge on the boundary. CONSTITUTION:Plural target members 801-803 are arranged on an electrode 102. At least one of the members is made of a material different from the material of other members. The direction of an electric field and that of a magnetic field are made almost parallel to each other on each boundary between the members, and the principal faces of the members 801-803 are sputtered. By this method the number of foreign matter sticking on a substrate 110 is reduced.
申请公布号 JPS60135574(A) 申请公布日期 1985.07.18
申请号 JP19830243844 申请日期 1983.12.26
申请人 HITACHI SEISAKUSHO KK 发明人 SAKATA MASAO;KOBAYASHI HIDE;KASAHARA OSAMU;OOGISHI HIDEJI;ABE KATSUO
分类号 C23C14/36;C23C14/35;H01J37/34 主分类号 C23C14/36
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