METHOD OF PRODUCING SEMICONDUCTOR DEVICES

摘要

A method of producing a semiconductor device includes the step of subjecting a silicon substrate to a direct nitriding to thereby produce a silicon nitride film. A reaction tubular vessel for carrying out the direct nitriding is first heated up to a predetermined reaction temperature and filled with an ammonia gas or a mixture gas of the ammonia gas and an inert gas. Subsequently arranged in the vessel is the silicon substrate on which the silicon nitride film is directly produced by a heat nitriding reaction. This nitriding reaction may be commenced as soon as the silicon substrate in the vessel is rapidly heated up to the reaction temperature so that the undesirable oxidation due to oxidizable impurities is avoided. The dense silicon nitride film thus produced is available for surface-protecting films for the semiconductor devices.