| 摘要 |
PURPOSE:To enable to realize a wiring connection method, by which a semiconductor device can be more highly integrated, by a method wherein W, which is a low-resistance metal, is used as a material for the gate electrode wiring of an MOS transistor, this W electrode wiring and impurity diffusion layers are made to directly transpose, a silicide film and a metal film are formed under the W electrode wiring through an oxide film, and the electrode wiring and the impurity diffusion layers are mutually connected at low resistance through the silicide film and the oxide film. CONSTITUTION:A thin gate oxide film 12 is adhered on a P type Si substrate 11, a part of the film 12 corresponding to a region 13, where a W electrode wiring 14 and impurity diffusion layers are made to directly transpose, is removed and the W electrode wiring 14 is formed on the exposed surface of the substrate 11 in direct contact to the surface. Then, N type impurity ions 15 are implanted in the whole surface using this electrode 14 as a mask and N<+> type impurity regions 16 and 17 are formed one by one on both sides of the electrode 14. After that, a thermal treatment of 800-1,000 deg.C is performed in an atmosphere of H2 containing water content and a W silicide film 18 and an oxide film 19 are made to grow under the electrode wiring 14 while the surface of the W electrode wiring 14 is prevented from being oxidized. According to such a method, the sheet resistivity of the film 18 becomes less than 10OMEGA/square. As a result, the film 18 becomes a suitable one for enabling to connect the W electrode wiring 14 with the impurity diffusion layers 16 and 17, each having a sheet resistivity of 20OMEGA/square or thereabouts. |
