| 摘要 |
PURPOSE:To obtain a MOS type semiconductor device at low cost by forming the structure of the MOS type semiconductor device capable of shaping source- drain regions by the formation of a film. CONSTITUTION:A gate electrode 12 and a gate insulating film are formed on the surface of a glass substrate 11. An amorphous Si film 14 is shaped on the gate insulating film, a source region 15 and a drain region 16 consisting of amorphous Si films are formed on the film 14 by the formation of films, and a source electrode 18 and a drain electrode 19 are formed through an inter-layer insulating film 17. According to such structure, the source-drain regions need not be formed by an expensive ion implanting device, and a MOS type amorphous thin-film transistor can be manufactured at low cost. |
