| 摘要 |
PURPOSE:To obtain an optical switch which is small in size and has high performance by using a semiconductor which generates a change in refractive index when injected with a carrier in the region for generating total reflection. CONSTITUTION:A super lattice layer 22 laminated in order of an InGaAsP layer and InP layer, an InP clad layer 23 and a metallic layer 24 for an electrode are laminated on an Sn-doped InP substrate 21. A total reflecting part is formed in accordance with stripe electrodes 24-1-24-4 and a counter electrode is provided as a common electrode over the entire rear surface of a laminated substrate 20. This optical switch is applicable to optical changeover of multimodes as well and the higher integration thereof as an optical switch array having a decreased optical transmission loss and a large extinction ratio is made possible.
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