| 摘要 |
PURPOSE:To contrive to increase the etching speed of a microwave plasma etching device by a method wherein a sample and a sample base are put in a discharge tube, the sample is put at the place on the distance within 30mm. in the propagation direction of a microwave from the magnetic flux density maximum point on the axis of the discharge tube, and the diameter of the sample base or a shielding plate is made to 3/4 or more of the inner diameter of the tube. CONSTITUTION:At a microwave plasma etching device, magnetic flux density according to a coil 3 becomes to the maximum in the neighborhood of the tip of a discharge tube 4, and a microwave is absorbed efficiently to form active particles the most. Accordingly, a sample 6 and a sample base 14 are put in the discharge tube, the sample 6 is put at the place of the distance within 300mm. from the magnetic flux density maximum point to make active particles to reach the sample to the maximum, the diameter of the base 14 is selected to 3/4 or more of the inner diameter of the discharge tube, or a shielding substance 15 is provided interposing an insulator 16 between them even when the inner diameter is 3/4 or less to reduce the exhaust velocity in the discharge tube, and a pressure rise of electric discharge gas, the increases of concentration of active particles and the number of times of projection are contrived. Moreover, a voltage is applied from the outside independently of the sample and/or the sample base, and moreover the sample is cooled. According to this construction, the etching speed is increased, and mass productivity is enhanced.
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