| 摘要 |
PURPOSE:To obtain a flat small-sized semiconductor device by etching one part of poly Si to form an opening section and selectively oxidizing the greater part of poly Si to shape an insulating isolation region. CONSTITUTION:A gate oxide film 2, poly Si 3 and an Si3N4 film are formed on an Si substrate 1 in succession, and an SiO2 film selectively ethed while using a resist film 6 as a mask is shaped on the film 4. The film 4, Si 3 and the film 2 are etched while employing the film 6 and the film 5 as masks, and the film 6 is removed. An Si3N4 film 7 is formed on the whole surface. The film 5 is removed, Si3N4 films 7a, 7d, 7e are lifted off, and a resist film 8 is shaped. The film 8 is removed, and SiO2 films 9a-9c are formed. Films 7b, 7c are left, and a film 4b is removed through etching. The films 7b, 7c are removed, and source- drain regions 10a, 10b are formed through ion implantation. Accordingly, the titled device can be miniaturized because intrusion to a diffusion region is eliminated and an opening section and a gate electrode can be shaped by the same mask. |
