| 摘要 |
PURPOSE:To reduce an influence of light reflected from a substrate, and to obtain a pattern of high precision by a method wherein an Al-N compound is used to form a layer at least at the uppermost layer of the under layers of a resist layer, and reactive ion etching is performed using SiCl4. CONSTITUTION:An organic high polymer layer 2 is provided on a substrate 1 having a material of high reflectance such as Al, etc. at the uppermost layer, an Al-N compound layer 3 is laminated according to DC sputtering, and a resist pattern 4 is put thereon. Reactive ion etching is performed to the Al-N compound layer 3 using SiCl4, and reactive ion etching is performed to the organic high polymer layer 2 using O2 in succession. Reactive ion etching is performed to the substrate 1 using SiCl4 finally. According to this method, because the Al-N compound has low reflectance and a large absorption coefficient to light, the influence of reflected light can be removed nearly completely even from the Al substrate of large light reflectance, and a pattern of high precision can be formed. |
