| 摘要 |
PURPOSE:To stabilize electrical and optical characteristics by forming an amorphous photoconductive Si-contg. layer region contg. a conductivity governor in a concn. distribution in the layer thickness direction having the max. value in this region and increasing on the side of a substrate in this region. CONSTITUTION:The first amorphous layer 102 composed of the first Ge-contg. layer region 103, and the second photoconductive Si-contg. layer region 104, and the second Si and O-contg. amorphous layer 105 are formed on a substrate 101 to fabricate a photoreceptive layer 107 and a photoconductive member 100. The first layer 102 contains a conductivity governor, such as B or Ga of group IIIA of the periodic table, or P or As of group VA of the periodic table, in a concn. distribution in the layer thickness direction having the max. value in the region 104 and increasing on the side of the substrate 101 in the region 104. |
