| 摘要 |
PURPOSE:To enable to perform conductor wirings in a semiconductor device by a method wherein an Fe-Ni alloy or an Fe-Co-Ni alloy, etc., is made to directly junction by diffusion to an SiC substrate. CONSTITUTION:A thin plate of a material having a thermal expansion coefficient approximate to that of an SiC such as an Fe-Ni alloy or an Fe-Co-Ni alloy, etc., is placed on an SiC substrate 1 having an excellent heat conductivity. They are pressed at 2.5kg/mm.<2> in a vacuum, a thermal treatment is performed for 1hr and a half at 800 deg.C and the thin plate is made to directly junction by diffusion to the substrate 1. After that, microscopic wirings 11 are formed on a semiconductor element 5 by performing an etching. According to this constitution, wiring conductors are directly junctioned to the SiC substrate 1, whose metallization is remarkably difficult, and microscopic wirings can be formed. As a result, the generation of a short-circuit trouble of junction wires can be prevented. |
