HIGH FREQUENCY SEMICONDUCTOR DEVICE ON AN INSULATING SUBSTRATE

摘要

A semiconductor device comprising a conductive layer; an insulting layer mounted on the conductive layer and having an opening; terminals deposited on the insulating layer; an active semiconductor element mounted on the conductive layer or the insulating layer, and; a capacitor mounted on the conductive layer. In this device, a path between the semiconductor element and the capacitor is very short and the conductive layer serves as a heat sink.