发明名称 Planar magnetron sputtering with modified field configuration.
摘要 <p>Planar magnetron sputtering sputters a target formed of plural target members (801, 802) from their principal surface (611, 612, 613). The plural target members are arranged on an electrode (103). The sputtering is carried out in such a condition that an electric field and magnetic field are substantially parallel in their direction as the boundary regions among the plural target members.</p>
申请公布号 EP0148470(A2) 申请公布日期 1985.07.17
申请号 EP19840115772 申请日期 1984.12.19
申请人 HITACHI, LTD. 发明人 KOBAYASHI, SHIGERU;ABE, KATSUO;SAKATA, MASAO;KASAHARA, OSAMU;OGISHI, HIDETSUGU
分类号 C23C14/34;H01J37/34;(IPC1-7):H01J37/34 主分类号 C23C14/34
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