MANUFACTURE OF SUBSTRATE FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE:To obtain a semiconductor film of the whole surface single crystal on an insulating substrate by beam-annealing the deposited semiconductor film with a single crystal semiconductor plate attached at one end of the substrate as a seed. CONSTITUTION:A single crystal semiconductor plate 2 is placed between an insulating substrate 1 and a semiconductor film 3 and when the semiconductor film 3 is melted by beam-annealing and recrystallized, and if the single crystal semiconductor plate 2 is used as a seed, the recrystallized semiconductor film is made single crystal in plane orientation as same as the single crystal semiconductor plate 2. Thus, the single crystal semiconductor plate is placed partially betwen the insulating substrate and the semiconductor film and the semiconductor film is beam-annealed so the beam-annealed semiconductor film has good crystallization and is also easily controlled in plane orientation.