| 摘要 |
PURPOSE:To eliminate the need for a contact region, and to fine an element by directly connecting an impurity region and polycrystalline Si each formed to the surface of a semiconductor substrate by using a silicide metal when the impurity region and polycrystalline Si are connected. CONSTITUTION:N channel MOSFET elements QA and QB are formed to the surface of a P type semiconductor substrate 11 while being alternately crossed at right angles, and these elements are isolated by field insulating films 12. One elememt QA is constituted by a polycrystalline Si gate 14 formed on the gate insulating film 13 and N<+> type source-drain regions 15, and the other element QB is also constituted by a polycrystalline Si gate 16 and source-drain regions 17 in the same manner. One end section 14a of the gate 14 for the element QA is extended up to the upper section of a region 17 in the element QB, and directly to the region 17. That is, one end section 14a of the gate 14 and the region 17 in the element QB are connected directly by silicide metals 19 and 20 shaped to the upper surface and side surface of the gate 14 from the surface of the region 17. Accordingly, a contact region which has been formed is unnecessitated, and leakage characteristics are not deteriorated. |
