发明名称 MASK PATTERN FOR X-RAY EXPOSURE
摘要 PURPOSE:To form the section of an Au pattern in a rectangular shape, and to enable to transfer the pattern having a favorable contrast by a method wherein a metal having large resistance against Ar ion etching is laminated according to plating on the Au plated film. CONSTITUTION:Cr and Au are continuously evaporated 2 as a ground electrode for plating on a BN supporting film 1 to transmit X-rays, a polymide resin pattern 3 is formed, and an Au film 4 and an Ni film 5 are laminated according to plating using the pattern 3 as a mask. After the resin 3 is removed according to O2 plasma, the Au and Cr layer of the ground electrode are removed according to Ar ion etching. The Ni film 5 has sufficient film thickness even after etching, and it can be understood that the Ni film functions as a protective film for the Au film. According to this construction, when the lower part electrode is etched, the Au film can be prevented from corrosion, a rectangularly sectional mask pattern can be obtained, pattern transference of a favorable contrast can be attained at X-ray exposure time, and precision of transference is enhanced. In addition to the Ni, to combine one kind or two kinds or more of Fe, Co, Cr, Zn is also favorable.
申请公布号 JPS60134420(A) 申请公布日期 1985.07.17
申请号 JP19830241999 申请日期 1983.12.23
申请人 HITACHI SEISAKUSHO KK 发明人 UMEZAKI HIROSHI;MARUYAMA YOUJI;SUGITA KEN
分类号 G03F1/00;G03F1/22;H01L21/027 主分类号 G03F1/00
代理机构 代理人
主权项
地址