SEMICONDUCTOR COMPONENT HAVING METALLIC BUMP CONTACTS AND MULTILAYER INTERCONNECTION

摘要

Semiconductor component in which the individual conductor tracks of each electrical signal or potential to be interconnected in multi layer interconnection technology are electrically connected in the region of the particular terminal contact to the latter and to one another, but are separated from one another in the remaining regions of the semiconductor component by insulating layers. The various insulating layers each terminate outside an imaginary perpendicular projection line of the edge of the base of the associated terminal contact at a distance of at least 5 mu m, said base being defined as the horizontal plane of section through the terminal contact concerned at the height at which the latter has the greatest horizontal extension on a final passivation layer situated underneath. This reliably avoids cracks and ruptures in the layers under the terminal contacts during the contact-making operation.