| 摘要 |
PURPOSE:To enable, with excellent reproducibility, the control of composition in the case of mixed crystal growth, the control of concentration of impurity in the case of impurity doping, the control of steepness of an interface in the preparation of a multilayer thin film structure, etc., by making of aluminum a pipe introducing a VI-group hydrogenated gas from the cylinder therefor into a crystal growth chamber. CONSTITUTION:One of hydrogenated gas cylinders is a cylinder 14 for a VI- group hydrogenated gas. A pipe 15 introducing the VI-group hydrogenated gas from the cylinder 14 into a crystal growth chamber 1 is provided independently from a pipe 6 introducing another hydrogenated gas from cylinders 4 into the crystal growth chamber 1, and it is made of aluminum. A connecting part of the pipe 15 made of aluminum with the crystal growth chamber 1 is provided with an air-operated valve 16, and a stainless steel pipe 17 for making a carrier gas flow in is connected to the middle of the pipe 15 made of aluminum. H2Se is introduced to the crystal growth chamber 1 by the pipe 15 made of aluminum, and it does not stick to the inner wall of the pipe 15. By this constitution H2Se is supplied in a very stable manner and with excellent reproducibility on the occasion of an Se dope InP growth. |
