| 摘要 |
PURPOSE:To contrive to reduce leakage current and to generate effective high voltage by a method wherein junction depth with the first region's semiconductor substrate, number of the first region connected mutually and specific condition between absorption coefficient of incidenting light are satisfied. CONSTITUTION:The first conductive type semiconductor substrate, plural reverse conductive type first region, the first conductive type second region formed on the surface of the reverse conductive type first region, one of the first regions mounted on the insulated film formed on the surface of the semiconductor substrate and a conductive film connecting electrically with the second region formed in the other first region separated from them are provided. When the junction depth with the first region's semiconductor substrate is designated as Xj, the number of the first region connected mutually is designated as (n), absorption coefficient of incidenting light is designated as alpha, the junction depth Xj is determined so that the formula is satisfied with them. After all, the formula should be satisfied so that electric current generates between both A, K terminals. Thereby, photo-electromotive force, which possesses high open voltage raised up by connected numbers, can be obtained from the diode disposed in series connection on the substrate. |
