| 摘要 |
A method is provided for anisotropically etching organic material to reduce mask undercutting. The layer of organic material to be patterned, with an overlying patterning mask is provided on a substrate. The substrate with the layer of organic material on it is placed on the powered electrode within a plasma reactor. A hydrogen plasma is generated in the reactor at a pressure between about 13.3 Pa and about 53 Pa. The organic layer which is not protected by the etch mask is etched by the hydrogen plasma. At these pressures the organic layer is removed by a process of ion assisted etching in which the hydrogen plasma chemically reacts with the organic material and the reaction is enhanced by ionic bombardment of the plasma species. Because the substrate and the organic material are placed on the powered electrode, the plasma ions impact the surface of the organic layer in a direction substantially perpendicular to the surface of the layer thus providing anisotropy to the etch.
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