发明名称 |
Ohmic contacts for hydrogenated amorphous silicon |
摘要 |
A method of forming an ohmic contact between an amorphous silicon hydride semiconductor and a substrate which includes coating a film of palladium on the substrate and overcoating the palladium with a thin film of amorphous silicon hydride forming a thin palladium silicide layer. The amorphous silicon hydride is dehydrogenated by annealing forming a highly defective amorphous silicon layer and a thicker palladium silicide layer through which carriers can readily tunnel. The amorphous silicon hydride semiconductor is then coated over the amorphous silicon layer to the desired thickness.
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申请公布号 |
US4529619(A) |
申请公布日期 |
1985.07.16 |
申请号 |
US19840631414 |
申请日期 |
1984.07.16 |
申请人 |
XEROX CORPORATION |
发明人 |
NEMANICH, ROBERT J.;THOMPSON, MALCOLM J. |
分类号 |
H01L31/04;H01L21/28;H01L21/285;H01L29/40;H01L29/45;H01L31/10;(IPC1-7):H01L21/324 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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