| 摘要 |
PURPOSE:To prevent a crystal defect from occurring by removing oversaturated oxygen atoms near the surface of a substrate, then implanting impurity atom ions, the annealing the damage of the implanted layer, and then burying and diffusing the implanted atoms. CONSTITUTION:A heat treatment is performed for a substrate at 1,100-1,250 deg.C in inert gas, and oversaturated oxygen atoms presented between Si gratings near the front and back surfaces of the substrate are removed out of the substrate. Then, impurity atoms are implanted into the substrate by ion implanting technique to simultaneously form buried layers 5, 6 of different conductive types on one semiconductor substrate. Then, a heat treatment at 650-750 deg.C is performed to anneal the damage produced at the layers 5, 6 at the impurity atom implanting time. Then, the impurity atoms are buried and diffused in the substrate from the impurity layer at 1,000-1,100 deg.C. Thus, due to the facts that no crystal defect is presented in the buried and diffused region of the substrate and no oversaturated oxygen atoms are presented in the vicinity of the surface of the substrate, the crystal defect is prevented at the next epitaxial layer growing time to grow an epitaxial layer 12 having complete crystallinity. |
