| 摘要 |
PURPOSE:To uniformly distribute gas and to perform good and uniform etching by holding a waferlike material to be etched on a basic electrode, and providing a gas exhaust hole in the opposed electrode to generate a gas plasma. CONSTITUTION:A waferlike material 2 to be etched is held on a table 1 to become a basic electrode, an opposite electrode 5 opposed thereto is provided, gas plasma is generated by applying high frequency wave to perform etching. In this case, a gas exhaust hole 17 is formed at the electrode 5, thereby uniformly distributing the gas on the material 2. |
