| 摘要 |
PURPOSE:To contrive noise reduction by reducing the base resistance of a transistor, and to reduce the collector resistance by a method wherein a groove is perpendicularly provided in a semiconductor substrate, and each impurity-diffused region is formed by diffusion-introduction of an impurity from the surface of this groove. CONSTITUTION:The groove 1 is formed by perpendicular etching of the semiconductor substrate by reactive ion etching or the like. Next, using this groove 1 as an aperture, a base region 2 is formed by diffusion. Then, an emitter region 3 is formed by diffusion. The base region 2 joins to a high concentration impurity region 4. A collector region 9 is provided with a collector wall region 5, where a collector electrode 12 is then provided. Besides, the collector region 9 is provided with an isolation region 6. |
