发明名称 Method of manufacturing a semiconductor device
摘要 A method of manufacturing a semiconductor device which comprises the steps of forming an interconnection layer through an insulating film on a semiconductor substrate, and connecting the diffusion interconnection region in the surface portion of said substrate to said interconnection layer by growing a metal or metal semiconductor compound on the surface of said substrate and the interconnection layer.
申请公布号 US4528744(A) 申请公布日期 1985.07.16
申请号 US19830482229 申请日期 1983.04.05
申请人 TOKYO SHIBAURA DENKI KABUSHIKI KAISHA 发明人 SHIBATA, TADASHI
分类号 H01L21/8234;H01L21/28;H01L21/3205;H01L21/768;H01L23/522;H01L23/532;H01L23/535;H01L27/088;(IPC1-7):H01L21/88 主分类号 H01L21/8234
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