发明名称 |
Method of manufacturing a semiconductor device |
摘要 |
A method of manufacturing a semiconductor device which comprises the steps of forming an interconnection layer through an insulating film on a semiconductor substrate, and connecting the diffusion interconnection region in the surface portion of said substrate to said interconnection layer by growing a metal or metal semiconductor compound on the surface of said substrate and the interconnection layer.
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申请公布号 |
US4528744(A) |
申请公布日期 |
1985.07.16 |
申请号 |
US19830482229 |
申请日期 |
1983.04.05 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
SHIBATA, TADASHI |
分类号 |
H01L21/8234;H01L21/28;H01L21/3205;H01L21/768;H01L23/522;H01L23/532;H01L23/535;H01L27/088;(IPC1-7):H01L21/88 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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