| 摘要 |
PURPOSE:To improve S/N and also to realize the reproduction of information on both sides of a memory element by increasing the Kerr revolving angle without reducing the reflection factor. CONSTITUTION:A vapor deposition film 2 made of Au serving as a reflecting film is provided on the upper surface side of a substrate 1 made of synthetic resin, etc. Then an amorphous ferromagnetic thin film 3 containing GdTbFe of rare earth and transition metals is formed on the film 2. In addition, a protecting film 4 is formed on the film 3. Thus the reflection factor has no change regardless of the presence or absence of the film 2. Furthermore, the Kerr revolving angle is greatly increased owing to the presence of the film 2. Thus it is possible to reproduce information on both sides of the substrate 1 and therefore the memory capacity doubles. |
