发明名称 MANUFACTURE OF SILICON CARBIDE OR MIXTURE CONTAINING SILICON CARBIDE
摘要 PURPOSE:To manufacture silicon carbide economically by a reducing method without using electric heating energy by using a specific vertical combustion furnace capable of heating a refractory tube in which raw materials are flowed downward, in a long range of the pipe at a prescribed temperature. CONSTITUTION:Plural long-sized refractory tubes 5 are provided vertically in the inside of a combustion chamber 4 of vertical furnace and, on the other hand, many blowing inlets 13 of oxygen (or air) are provided to the furnace refractories 7 of the side wall in the upper and lower directions. Gaseous fuel (for example, gas consisting essentially of H2 and CO) blowing in from an introducing inlet 15 is burned stepwise with oxygen blowing in from an introducing inlet 17 and a high temperature part of 1,650-2,000 deg.C is formed along the refractory tubes 5 in the long range. By using the furnace, briquettes consisting of silicon compound and carbon in prescribed ratios are charged to the inside of the refractory tubes 5 from a hopper 1 and are caused to fall down while forming the transferring packed bed and these are heated intermediately and caused to react for the period and the produced silicon carbide is taken out from the outlet of a hopper 12.
申请公布号 JPS60131820(A) 申请公布日期 1985.07.13
申请号 JP19830236331 申请日期 1983.12.16
申请人 SHIN NIPPON SEITETSU KK 发明人 ONOZAWA MASAO
分类号 C01B31/36 主分类号 C01B31/36
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