| 摘要 |
PURPOSE:To form a film having a uniform thickness distribution by sputtering on a substrate of a large diameter by placing plural sputtering guns so that they confront the substrate to be processed. CONSTITUTION:Plural planar magnetron sputtering guns 22a, 22b, 22c are placed at prescribed positions of a side wall of a chamber 21 so that they confront a substrate to be processed such as a semiconductor substrate 23 at a prescribed angle each. The chamber 21 is evacuated, and gaseous Ar or the like is introduced to adjust the degree of vacuum. Negative high voltage is applied to each of the guns 22a, 22b, 22c, and the constituent element of a target such as Al is deposited on the substrate 23 by sputtering to form a film. Even when the substrate 23 has an increased diameter, uniform step coverage and a uniform thickness distribution can be attained without increasing the caliber of the sputtering guns. |
