| 摘要 |
PURPOSE:To stabilize electrical, optical, and photoconductive characteristics by forming on a substrate a photoreceiver composed of the first layer made of a-Si, the second layer made of a-SiGe, and the third layer made of a-SiC in this order and incorporating halogen in either of the first and second layers. CONSTITUTION:A photoreceiver 102 formed on a substrate 101 is composed of the first layer 103 made of a-Si, the second layer 104 made of a-SiGe, and the third layer 105 made of a-SiC from the side of the substrate. Halogen, H, or a conductivity-governing element, such as group III or V, are contained in at least one of the first and second layers 103, 104. The photoreceiver 102 having such a layer structure has superior electrical, optical, and photoconductive characteristics, and superior voltage withstanding and use environment resisting characteristics, and especially when used as an electrophotographic image-forming member, it is perfectly free of the effect of residual potential on image formation, stabilized in electric characteristics, high in sensitivity, good in durability, and it can stably form an image high in quality, and further, it is especially superior in matching with a semiconductor laser, and high in light responsivity. |
