| 摘要 |
PURPOSE:To always stabilize electrical, optical, and photoconductive characteristics and to give all-weather type resistance and to improve photosensitivity in the long wavelength region by constituting on a substrate a photoreceiver composed of the first layer containing a-SiH, the second layer containing a-SiGeH, and the third layer containing a-SiO in this order. CONSTITUTION:A photoreceiver 102 formed on a substrate 101 is composed of the first layer 103 containing a-SiH, the second layer 104 containing a-SiGeH, and the third layer 105 containing a-SiO in this order. A conductivity-governing element is contained in at least one of the layers 103, 104. H and/or halogen is contained in the layer 105. The photoreceiver 102 having such a layer structure has superior electrical, optical, and photoconductive characteristics, and superior voltage withstanding and use environment resisting characteristics, and especially when used as an electrophotographic image-forming member, it is free of the effect of residual potential on image formation, stabilized in electric characteristics, high in sensitivity, good in durability, and it can stably form an image high in quality, and further, it is especially superior in matching with a semiconductor laser, and high in light responsivity. |
