| 摘要 |
PURPOSE:To suppress the plastic deformation of wafers and to enable to upgrade the yield of the semiconductor products by a method wherein means, from where gas is fed in parallel to the main surfaces of the wafers, are provided. CONSTITUTION:Plural nozzles 13 are opened in one end part of a gas introducing tube 11 provided on the upper side of the interior of a furnace core tube 12, where is located in the vicinity of the entrance of the furnace core tube 12, at a right angle to the taking in and out direction of wafers 61, 62,... in such a way as to feed atmospheric gas 3 in parallel to the main surfaces of the wafers 61, 62,.... According to this method, a temperature difference can be prevented from generating between the central parts of the wafers 61, 62,... and the peripheral parts thereof and the plastic deformation of the wafers 61, 62,... can be suppressed. Moreover, the yield of the semiconductor products can be improved, and also when an oxidation and a diffusion are performed, the dispersions of the film thickness and diffusion length of the oxide film can be prevented from generating and the throughout can be prevented from lowering. |
