| 摘要 |
PURPOSE:To increase the heat dissipation of a semiconductor chip above a protrusion and to upgrade the high-output characteristics of a semiconductor device by a method wherein the protrusion put on the upper part of a metal base is formed in such a way that the lower-side part becomes larger than the upper-side part in horizontal sectional area and the heat transmission of the protrusion is augmented by such a formation of the protrusion. CONSTITUTION:The generating heat of a semiconductor chip 1 is chiefly radiated by a heat transmission to a protrusion 12, because the junction area between the semiconductor chip 1 and an electrode bump 3 arranged between other two electrode bumps 2 and 4 is larger than each of the junction areas between the semiconductor chip 1 and the other two electrode bumps 2 and 4. Therefore, the protrusion 12 of a metal base 11 consisting of a metal material having a good heat conductivity such as a copper material is formed in two stages in such a way that the section of the lower face becomes larger than that of the upper face for upgrading the heat radiation thereof by making to augment the sectional area of heat transmission. As a result, the high-output characteristics of this device are improved, and in case this device is a high-frequency and high-output transistor, even through ceramic plates 7 and 8 are formed thick so as to lessen the parasitic capacity, the heat dissipation of the semiconductor chip 1 is superior and a higher-output performance can be fulfilled. |
