发明名称 MULTI-INPUT CMOS GATE CIRCUIT
摘要 PURPOSE:To eliminate the charge distribution due to floating capacitance by adding a load element to an (n+2) multi-input CMOS gate circuit having less number of component elements. CONSTITUTION:The load element QL2 is connected between the connecting point of the 1st power supply VSS and the 2nd power supply VSS. In this circuit the level of a1-a4 is all at L during the period 0-1, only a P-channel transistor (TR) QP1 is turned on and QN1-QN4 are all turned off. Thus, an electric charge is charged to a C1 by the QP1, while an electric charge is charged to the 2nd load element QL2 being comparatively low in the resistance to a C2. When the charging is finished in the period of 0-1, the C2 is charged up to a VDD level. Thus, the a1 goes to H at the next period 1-2 and no charge distribution from the C1 to the C2 when the QN1 is turned on takes place. The operation is similar in other periods.
申请公布号 JPS60130921(A) 申请公布日期 1985.07.12
申请号 JP19830240104 申请日期 1983.12.20
申请人 MATSUSHITA DENKI SANGYO KK 发明人 HASHIRANO MASARU
分类号 H03K19/0944;H03K19/0948;H03K21/10 主分类号 H03K19/0944
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