发明名称 SEMICONDUCTOR MEMORY
摘要 PURPOSE:To suppress the power supply current and chip size to a required minimum value by using a data input terminal of a couple of drive circuit driving a couple of data lines in common, allowing a couple of drive circuit to input a couple of data information pieces complementary to a couple of data lines so as to write data to the memory array. CONSTITUTION:A couple of data lines 1, 2 and an address line 4 are connected to the memory array 3 so as to be crossed together. Data are read and written by the data lines 1, 2 to the memory array 3 selected by the address line 4. The write/read is controlled by a write/read control line 5 in cross connection with the data lines 1, 2. In case of write, the data lines 1, 2 input complementary data information with opposite logical state. Inverse drive circuit 6, 8, 9 drive the datalines 1, 2 so as to input the data information like this. The inverse drive circuit 8 can be a simple inverter having a small drive capability.
申请公布号 JPS60129997(A) 申请公布日期 1985.07.11
申请号 JP19830239095 申请日期 1983.12.19
申请人 TOSHIBA KK 发明人 SAWANO TAKUYA
分类号 G11C11/417;G11C11/34;(IPC1-7):G11C11/34 主分类号 G11C11/417
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