| 摘要 |
PURPOSE:To enable heat to be utilized or generated effectively by a method wherein N type and P type thermopower generation semiconductors constructed in a bar form are made integral in the state of junction at the tip, and an insulator is placed by interposal between each except the junction part. CONSTITUTION:The N type and P type semiconductors 11 and 12 formed in a bar are constructed by combination in the sate of junction to each other at the tip of each, so as to form the P-N junction 13. The gap between the semiconductors 11 and 12 except this junction 13 is filled withd the insulator 14 of low thermal conductivity. Such an integral construction of the semiconductors 11 and 12 enables the construction of a functional element 15, which element 15 is then contained and fixed in a cylindrical housing 17. A lead 18 is led out of the semiconductors 11 and 12 fixed in the housing 17. This construction enables the effective conversion of thermal energy into electrical energy and the use as a heat generator.
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